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U.S. Department of Energy
Office of Scientific and Technical Information

Ion implantation

Conference ·
OSTI ID:4117296
First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals. (FR)
Research Organization:
UKAEA Research Group, Harwell. Atomic Energy Research Establishment
NSA Number:
NSA-33-012668
OSTI ID:
4117296
Country of Publication:
France
Language:
English