Ion implantation
Conference
·
OSTI ID:4117296
First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals. (FR)
- Research Organization:
- UKAEA Research Group, Harwell. Atomic Energy Research Establishment
- NSA Number:
- NSA-33-012668
- OSTI ID:
- 4117296
- Country of Publication:
- France
- Language:
- English
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Related Subjects
*METALS-- ION IMPLANTATION
*SILICON-- ION IMPLANTATION
360605* --Materials--Other Materials--Radiation Effects
ALLOYS
CORROSION
CRYSTAL DOPING
FRICTION
N50210 --Metals
Ceramics
& Other Materials--Metals & Alloys--Corrosion & Erosion & Surface Phenomena
N50240 --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
N50340* --Metals
Ceramics
& Other Materials--Plastics & Other Materials--Radiation Effects
PHYSICAL RADIATION EFFECTS
WEAR
*SILICON-- ION IMPLANTATION
360605* --Materials--Other Materials--Radiation Effects
ALLOYS
CORROSION
CRYSTAL DOPING
FRICTION
N50210 --Metals
Ceramics
& Other Materials--Metals & Alloys--Corrosion & Erosion & Surface Phenomena
N50240 --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
N50340* --Metals
Ceramics
& Other Materials--Plastics & Other Materials--Radiation Effects
PHYSICAL RADIATION EFFECTS
WEAR