Low temperature deposition of metal nitrides by thermal decomposition of organometallic compounds

Journal Article · Fri Oct 31 23:00:00 EST 1975 · J. Electrochem. Soc., v. 122, no. 11, pp. 1545-1549

DOI:https://doi.org/10.1149/1.2134060· OSTI ID:4115502

Sugiyama, K; Pac, S; Takahashi, Y; Motojima, S

Decomposition reaction of dialkylamides of boron, silicon, tin, titanium, zirconium, niobium, and tantalum was investigated. The amides of transition metals decomposed to the corresponding nitrides at 300 to 500$sup 0$C, whereas those of boron, silicon, and tin yielded elemental deposits at higher temperatures. In the deposition of titanium nitride from titanium tetrakis (dimethylamide), two optimum temperatures at 400$sup 0$ and at 800$sup 0$C in nitrogen or hydrogen atmosphere were found, but in argon only low temperature deposition was possible. The low and high temperature processes are discussed in relation to mass spectral analysis of the exhaust gases formed at various decomposition temperatures of titanium amide. (auth)

• Research Organization: Gifu Univ., Kagamigahara, Japan
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-017622
• OSTI ID: 4115502
• Journal Information: J. Electrochem. Soc., v. 122, no. 11, pp. 1545-1549, Journal Name: J. Electrochem. Soc., v. 122, no. 11, pp. 1545-1549; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

*BORON NITRIDES-- CHEMICAL PREPARATION
*NIOBIUM NITRIDES-- CHEMICAL PREPARATION
*SILICON NITRIDES-- CHEMICAL PREPARATION
*TANTALUM-- CHEMICAL PREPARATION
*TIN NITRIDES-- CHEMICAL PREPARATION
*TITANIUM NITRIDES-- CHEMICAL PREPARATION
*ZIRCONIUM NITRIDES-- CHEMICAL PREPARATION
360201* --Materials--Ceramics
Cermets & Refractories-- Preparation & Fabrication
AMIDES
ARGON
DECOMPOSITION
HIGH TEMPERATURE
HYDROGEN
MASS SPECTROSCOPY
N50120* --Metals
Ceramics
& Other Materials--Ceramics & Cermets--Preparation & Fabrication
NITROGEN
ORGANOMETALLIC COMPOUNDS