CARRIER TRAPPING BY DEFECT CLUSTERS IN NEUTRON-IRRADIATED SILICON.
Journal Article
·
· Phys. Status Solidi (a) 2: 261-5 (16 Jun 1970).
- Research Organization:
- Rice Univ., Houston, Tex.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-24-047301
- OSTI ID:
- 4114045
- Journal Information:
- Phys. Status Solidi (a) 2: 261-5 (16 Jun 1970)., Journal Name: Phys. Status Solidi (a) 2: 261-5 (16 Jun 1970).
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
ANNEALING
CARRIERS
DEFECTS
FAST NEUTRONS
N33110* --Physics (Solid State)--Radiation Effects
NEUTRON BEAMS
NEUTRONS
FAST/effects on carriers in n-type silicon
annealing of trapping by defect clusters in
(E)
RADIATION EFFECTS
SILICON
SILICON/radioinduced carrier trapping by defect clusters in n-type
annealing of neutron-
(E)
TEMPERATURE
TRAPS
CARRIERS
DEFECTS
FAST NEUTRONS
N33110* --Physics (Solid State)--Radiation Effects
NEUTRON BEAMS
NEUTRONS
FAST/effects on carriers in n-type silicon
annealing of trapping by defect clusters in
(E)
RADIATION EFFECTS
SILICON
SILICON/radioinduced carrier trapping by defect clusters in n-type
annealing of neutron-
(E)
TEMPERATURE
TRAPS