Damage in UO2 Films and Particles During Reactor Irradiation
Journal Article
·
· Journal of Applied Physics
The effects of reactor radiation in the range 1016 to 4.4 x 1019 nvt on thin UO2 films and UO2 particles dispersed in thin aluminum films were studied with transmission electron microscopy and electron diffraction. The irradiations were carried out on samples in air and in evacuated capsules. For UO2 films of 100 A thickness, regions tend to migrate with increasing exposure to form isolated outgrowths of dense, smooth form in vacuum and of flocculent form in air. For UO2 particles of 1 to 2 mu diameter in aluminum films, no evidence of UO2 condensation was found for irradiation in vacuum, whereas for air, condensation was observed for exposures above 5 x 1017 nvt. At higher exposures (4.4 x 119 nvt), the original particles were replaced by flocculent crystals which are similar to those formed in irradiation of UO2 films in air.
- Research Organization:
- General Electric Co., Hanford Atomic Products Operation, Richland, Wash.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-15-009516
- OSTI ID:
- 4100432
- Report Number(s):
- HW-SA-1950; 0021-8979
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 31; ISSN JAPIAU; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
THE IRRADIATION OF THIN EVAPORATED FILMS OF URANIUM DIOXIDE. Interim Report
Irradiation-Driven Restructuring of UO2 Thin Films: Amorphization and Crystallization
IN-PILE MEASUREMENT OF THE ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF SINTERED UO$sub 2$
Technical Report
·
Tue Sep 01 00:00:00 EDT 1959
·
OSTI ID:4206741
Irradiation-Driven Restructuring of UO2 Thin Films: Amorphization and Crystallization
Journal Article
·
Thu Jul 15 20:00:00 EDT 2021
· ACS Applied Materials and Interfaces
·
OSTI ID:1820113
IN-PILE MEASUREMENT OF THE ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF SINTERED UO$sub 2$
Technical Report
·
Mon May 01 00:00:00 EDT 1961
·
OSTI ID:4009319