POROSITY AND ANOMALOUS RECRYSTALLIZATION BEHAVIOR IN DOPED TUNGSTEN WIRE.
Journal Article
·
· Met. Trans. 1: 3225-31(Nov 1970).
OSTI ID:4097127
- Research Organization:
- General Telephone and Electronics Labs., Bayside, N. Y.
- NSA Number:
- NSA-25-004799
- OSTI ID:
- 4097127
- Journal Information:
- Met. Trans. 1: 3225-31(Nov 1970)., Journal Name: Met. Trans. 1: 3225-31(Nov 1970).; ISSN MTGTB
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
ALUMINUM
CRYSTAL DOPING
HIGH TEMPERATURE
IMPURITIES
N30140* --Metals
Ceramics
& Other Materials--Metals & Alloys--Structure & Phase Studies
POROSITY
POTASSIUM
RECRYSTALLIZATION
SILICON
TUNGSTEN
TUNGSTEN/crystallization in aluminum--potassium-- silicon-doped wire of
at 1400 to 1600$sup 0$C
effects of porosity on anomalous
WIRES
CRYSTAL DOPING
HIGH TEMPERATURE
IMPURITIES
N30140* --Metals
Ceramics
& Other Materials--Metals & Alloys--Structure & Phase Studies
POROSITY
POTASSIUM
RECRYSTALLIZATION
SILICON
TUNGSTEN
TUNGSTEN/crystallization in aluminum--potassium-- silicon-doped wire of
at 1400 to 1600$sup 0$C
effects of porosity on anomalous
WIRES