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Title: Epitaxial growth of thin films of SrTi{sub 1{minus}x}Ru{sub x}O{sub 3{minus}{delta}} by pulsed laser deposition

Journal Article · · Materials Research Bulletin
; ;  [1]
  1. IBM Research Division, Yorktown Heights, NY (United States). T.J. Watson Research Center

The pulsed laser deposition technique has been utilized for thin film synthesis of a continuous series of solid solutions of the end member perovskite compounds SrTiO{sub 3} and SrRuO{sub 3}. The SrTi{sub 1{minus}x}Ru{sub x}O{sub 3{minus}d} (0 {le} x {le} 1) films are grown epitaxially on (100)-oriented SrTiO{sub 3} substrates in a low pressure atomic oxygen ambient with in situ monitoring using reflection high-energy electron diffraction (RHEED). The as-deposited films are cubic or pseudocubic over the whole composition range with the lattice parameter increasing continuously with increasing Ru{sup 4+} substitution. Correspondingly, the resistivity evolves from insulating to metallic behavior. The solid solution films are potentially useful as latticed-matched buffer layers for heteroepitaxial growth, or as barrier layers in tunnel unctions with controlled resistive properties.

OSTI ID:
409691
Journal Information:
Materials Research Bulletin, Vol. 31, Issue 12; Other Information: PBD: Dec 1996
Country of Publication:
United States
Language:
English