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Tunneling-current-induced transitions of superconducting thin films

Conference · · IEEE Trans. Magn., v. MAG-11, no. 2, pp. 358-361
OSTI ID:4095034
The resistive state of a superconducing film can be induced either by passing sufficient current along the film or by raising the temperature above T/ sub c/. We have been studying this transition in aluminum films when they are injected with ''hot'' (i.e., nonthermal) phonons and electrons. This injection efficiently breaks electron pairs in the region near the injection point. These ''hot'' electrons and phonons are produced by tunnel junctions which incorporate or are adjacent to the Al film under study. This method of current injection usually results in significantly lower critical currents than the critical current measured conventionally along the film. Well-defined and reproducible critical currents together with I-V traces for the Al film, which under certain conditions are characterized by a series of constant current voltage steps, have been obtained with a variety of geometrical configurations and different tunnel junction resistances. (auth)
Research Organization:
Bell Telephone Labs., Murray Hill, NJ
NSA Number:
NSA-33-018748
OSTI ID:
4095034
Conference Information:
Journal Name: IEEE Trans. Magn., v. MAG-11, no. 2, pp. 358-361
Country of Publication:
United States
Language:
English