Electron and proton damage coefficients in low-resistivity silicon
Electron and proton damage coefficients have been determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Major observations made and conclusions reached are the following. (1) Diffusion-length damage coefficients (K/sub L/) increase with decreasing resistivity (rho) for boron- doped silicon. For 0.5-, 1.0-, and 2.5-MeV electron bombardment, empirical fits to experimental data can be approximately expressed as K/sub L/ varies as rho$sup -$/sup $sup 2$$/$$sub 3$/ for 0.1 less than or equal to rho less than or equal to 20 ohm-cm. For 10-MeV proton bombardment, an empirical fit of the form K/sub L/ varies as rho$sup -0$$.$$sup 44$ was found to describe the data reasonably well. (2) The dependence of damage coefficient on resistivity can be qualitatively accounted for quite well using a two-level Hall--Shockley--Read model. (3) Damage coefficients for solar cells were observed to be larger than their bulk- material counterparts. (4) Bulk samples and solar cells prepared from float-zone material were generally observed to be more radiation tolerant than their Czochralski counterparts at all resistivities examined. (5) No dependence of damage coefficient on dislocation density was apparent for 0.1 ohm-cm bulk samples and solar cells. (auth)
- Research Organization:
- Northrop Research and Technology Center, Hawthorne, CA
- NSA Number:
- NSA-33-020360
- OSTI ID:
- 4083517
- Journal Information:
- IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2656-2662, Conference: Annual conference on nuclear and space radiation effects, Arcata, CA, 14 Jul 1975; Other Information: Orig. Receipt Date: 30-JUN-76
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
440200* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
*SILICON SOLAR CELLS- PHYSICAL RADIATION EFFECTS
*SILICON- PHYSICAL RADIATION EFFECTS
BORON ADDITIONS
CARRIER LIFETIME
DIFFUSION LENGTH
ELECTRONS
ENERGY DEPENDENCE
KEV RANGE 100-1000
MEV RANGE 01-10
PROTONS
RECOMBINATION
SATURATION