PHOTOCONDUCTIVITY STUDIES OF Li-DOPED SILICON IRRADIATED WITH 1.5 MeV ELECTRONS.
Journal Article
·
· Phys. Status Solidi (a) 4: 121-31(16 Jan 1971).
- Research Organization:
- Ecole Normale Superieure, Paris
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-25-030653
- OSTI ID:
- 4074145
- Journal Information:
- Phys. Status Solidi (a) 4: 121-31(16 Jan 1971)., Other Information: Orig. Receipt Date: 31-DEC-71
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N33110* -Physics (Solid State)-Radiation Effects
ANNEALING
COMPLEXES
DEFECTS
DOPED MATERIALS
ELECTRON SPIN RESONANCE
ELECTRONS
IMPURITIES
IRRADIATION
LITHIUM
MEV RANGE 01-10
OXYGEN
PHOTOCONDUCTIVITY
RADIATION EFFECTS
SILICON
SPECTRA
SILICON/radioinduced defects in lithium-doped n-type
ESR and photoconductivity study of annealing of 1.5-MeV electron
ELECTRONS/ effects on lithium-doped silicon at 1.5 MeV
ESR and photoconductivity study of annealing of
ANNEALING
COMPLEXES
DEFECTS
DOPED MATERIALS
ELECTRON SPIN RESONANCE
ELECTRONS
IMPURITIES
IRRADIATION
LITHIUM
MEV RANGE 01-10
OXYGEN
PHOTOCONDUCTIVITY
RADIATION EFFECTS
SILICON
SPECTRA
SILICON/radioinduced defects in lithium-doped n-type
ESR and photoconductivity study of annealing of 1.5-MeV electron
ELECTRONS/ effects on lithium-doped silicon at 1.5 MeV
ESR and photoconductivity study of annealing of