USE OF HOLLOW CATHODE DC PLASMA DISCHARGE FLOAT ZONING FOR THE GROWTH OF MATERIALS WITH HIGH MELTING POINTS: THE GROWTH OF SINGLE CRYSTALS OF Ta$sub 2$C.
Journal Article
·
· J. Cryst. Growth 6: 261-5(Mar-Apr 1970).
- Research Organization:
- Bell Telephone Labs., Inc., Murray Hill, N. J.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-25-011484
- OSTI ID:
- 4064660
- Journal Information:
- J. Cryst. Growth 6: 261-5(Mar-Apr 1970)., Other Information: Orig. Receipt Date: 31-DEC-71
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N30220* -Metals
Ceramics
& Other Materials-Ceramics & Cermets-Preparation & Fabrication
DIRECT CURRENT
HOLLOW CATHODES
MONOCRYSTALS
PLASMA
PREPARATION
TANTALUM CARBIDES
ZONE REFINING
TANTALUM CARBIDES/preparation of monocrystalline Ta$sub 2$C
hollow cathode dc plasma discharge zone melting method for
Ceramics
& Other Materials-Ceramics & Cermets-Preparation & Fabrication
DIRECT CURRENT
HOLLOW CATHODES
MONOCRYSTALS
PLASMA
PREPARATION
TANTALUM CARBIDES
ZONE REFINING
TANTALUM CARBIDES/preparation of monocrystalline Ta$sub 2$C
hollow cathode dc plasma discharge zone melting method for