Hardness and fracture toughness of bulk single crystal gallium nitride
- Crystallume, 3506 Bassett Street, Santa Clara, California 95054 (United States)
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Unipress, Polish Academy of Sciences, 01-142 Warszawa (Poland)
Basic mechanical properties of single crystal gallium nitride are measured. A Vickers (diamond) indentation method was used to determine the hardness and fracture toughness under an applied load of 2N. The average hardness was measured as 12{plus_minus}2 GPa and the average fracture toughness was measured as 0.79{plus_minus}0.10 MPa{radical}m. These values are consistent with the properties of brittle ceramic materials and about twice the values for GaAs. A methodology for examining fracture problems in GaN is discussed. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 404782
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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