Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Hardness and fracture toughness of bulk single crystal gallium nitride

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.117865· OSTI ID:404782
 [1];  [2]; ; ;  [3]
  1. Crystallume, 3506 Bassett Street, Santa Clara, California 95054 (United States)
  2. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  3. Unipress, Polish Academy of Sciences, 01-142 Warszawa (Poland)

Basic mechanical properties of single crystal gallium nitride are measured. A Vickers (diamond) indentation method was used to determine the hardness and fracture toughness under an applied load of 2N. The average hardness was measured as 12{plus_minus}2 GPa and the average fracture toughness was measured as 0.79{plus_minus}0.10 MPa{radical}m. These values are consistent with the properties of brittle ceramic materials and about twice the values for GaAs. A methodology for examining fracture problems in GaN is discussed. {copyright} {ital 1996 American Institute of Physics.}

Research Organization:
Lawrence Berkeley National Laboratory
DOE Contract Number:
AC03-76SF00098
OSTI ID:
404782
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 69; ISSN 0003-6951; ISSN APPLAB
Country of Publication:
United States
Language:
English

Similar Records

High temperature hardness of bulk single crystal GaN
Conference · Sat Jul 01 00:00:00 EDT 2000 · OSTI ID:20104568

Yield strength and brittle-to-ductile transition of boron-nitride and gallium-nitride
Journal Article · Fri Aug 20 00:00:00 EDT 1999 · Scripta Materialia · OSTI ID:691314

Microstructural effects on the hardness, elastic modulus and fracture toughness of CVD diamond
Book · Wed Dec 30 23:00:00 EST 1998 · OSTI ID:305563