Thermodynamics of the formation of TiN from TiCl{sub 4}-NH{sub 3}-H{sub 2} on a patterned oxidized silicon substrate

Journal Article · Tue Oct 01 04:00:00 EDT 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837193· OSTI ID:404669

Bouteville, A; Imhoff, L; Remy, J C ^[1]

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1. Ecole Nationale Superieure d`Arts, Metiers d`Angers (France). Lab. de Physico-Chimie des Surfaces

A thermodynamic study of titanium nitride formation on a patterned oxidized silicon substrate in the TiCl{sub 4}-NH{sub 3}-N{sub 2} gaseous phase was carried out. Calculations were performed in the temperature range of 700--1,300 K and in the total pressure range of 27--133 Pa. On a silicon oxide surface, TiN formation occurs according to a three-step mechanism involving TiCl{sub 3} formation as an intermediate compound. On a TiN surface, the deposition occurs in the same manner. On a silicon surface, titanium disilicide or silicon nitride are the only condensed phases obtained at equilibrium in the TiCl{sub 4}-rich and NH{sub 3}-rich cases, respectively. Because silicon diffusion is allowed through TiSi{sub 2} and not through Si{sub 3}N{sub 4}, TiN can only grow on a Si{sub 3}N{sub 4} surface. In spite of the fact that Si{sub 3}N{sub 4} is not conductive, the formation of a thin Si{sub 3}N{sub 4} covering layer is necessary for TiN growth. Calculations show that the best TiN yield is obtained with an ammonia-rich gaseous phase at a deposition temperature of about 1,100 K.

• Sponsoring Organization: USDOE
• OSTI ID: 404669
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 10 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CHEMICAL VAPOR DEPOSITION
HYDROGEN
SILICON NITRIDES
SILICON OXIDES
THERMODYNAMICS
TITANIUM CHLORIDES
TITANIUM NITRIDES
TITANIUM SILICIDES
VAPOR DEPOSITED COATINGS