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SECONDARY ELECTRON EMISSION FROM COPPER-BERYLLIUM (4%) SURFACE BY BOMBARDMENT OF VARIOUS POSITIVE IONS

Journal Article · · Bull. Chem. Soc. Japan
DOI:https://doi.org/10.1246/bcsj.34.58· OSTI ID:4031603

The secondary electron emissron from the non-activated and activated surfaces of copper-beryllium (4%) by the impacts of various noble gas and hydrocarbon rons was studied, and the surface structure was determined by electron diifraction analysis. The main results obtained are as follows: A thick layer of beryllium oxide is formed in the neighborhood of the target surface activated by oxygen at 350 to 480 deg C. Oxide films of copper are formed on the target surface by electropolishing, but these oxides are easily reduced by prolonged ion bombardment. The optimum temperature for electron yield activation seems to be about 420 deg C, and the electron yield for the activated target surface treated at 350 or 420 deg C is only slightly dependent upon the ion kinetic energy. No measurable decrease in the electron yield for an activated surface treated at 420 deg C was obtained by prolonged bombardments with various positive ions, while the electron yield for the non-activated surface decreases about 20% in prolonged bombardments. Under the experimental conditions used, the mechanism of electron ejection seems to be considerably complicated, and it is difficult to deduce any definite conclusion for the electron ejection process. (auth)

Research Organization:
Osaka Prefectural Univ., Univ. of Osaka Prefecture, Sakai, Japan
Sponsoring Organization:
USDOE
NSA Number:
NSA-15-016205
OSTI ID:
4031603
Journal Information:
Bull. Chem. Soc. Japan, Journal Name: Bull. Chem. Soc. Japan Vol. Vol: 34
Country of Publication:
Country unknown/Code not available
Language:
English