Superconducting magnesium diboride films on Si with T{sub c0}{approx}24 K grown via vacuum annealing from stoichiometric precursors

Journal Article · Mon Oct 15 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1410360· OSTI ID:40277789

Zhai, H Y; Christen, H M; Zhang, L; Cantoni, C; Paranthaman, M; Sales, B C; Christen, D K; Lowndes, D H

Superconducting magnesium diboride films with T{sub c0}{approx}24 K and sharp transition {approx}1 K were prepared on Si by pulsed-laser deposition from stoichiometric MgB{sub 2} target. Contrary to previous reports, anneals at 630 C and a background of 2 x 10{sup -4} Ar/4%H{sub 2} were performed without the requirement of Mg vapor or Mg cap layer. This integration of superconducting MgB{sub 2} film on Si may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy show that the films have a uniform surface morphology and thickness. Energy-dispersive spectroscopy study reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low T{sub c} for those in situ annealed films, while the use of Si as a substrate does not result in a decrease in T{sub c} as compared to other substrates.

• Sponsoring Organization: (US)
• OSTI ID: 40277789
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AIR
ANNEALING
CONTAMINATION
DEPOSITION
MAGNESIUM
MORPHOLOGY
OXYGEN
SCANNING ELECTRON MICROSCOPY
SPECTROSCOPY
SUBSTRATES
THICKNESS