Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process
Journal Article
·
· Physical Review Letters
Reflectance-difference (RD) measurements for the oxidation of single-domain (2 x 1) -reconstructed Si(001) surfaces show that the polarity of the interface-induced optical anisotropy is reversed repeatedly with increasing oxide thickness. The oscillation of the RD amplitude, which we show is due to layer-by-layer progression of the oxidation, has allowed us to count the number of oxidized Si layers in situ during oxidation. The origins of the observed spectral line shape are discussed.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40277136
- Journal Information:
- Physical Review Letters, Vol. 87, Issue 3; Other Information: DOI: 10.1103/PhysRevLett.87.037403; Othernumber: PRLTAO000087000003037403000001; 054129PRL; PBD: 16 Jul 2001; ISSN 0031-9007
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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