High temperature surface degradation of III{endash}V nitrides

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588792· OSTI ID:402517

Vartuli, C B; Pearton, S J; Abernathy, C R; MacKenzie, J D; Lambers, E S ^[1]; Zolper, J C ^[2]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

The surface stoichiometry, surface morphology, and electrical conductivity of AlN, GaN, InN, InGaN, and InAlN were examined at rapid thermal annealing temperatures up to 1150{degree}C. The sheet resistance of the AlN dropped steadily with annealing, but the surface showed signs of roughening only above 1000{degree}C. Auger electron spectroscopy (AES) analysis showed little change in the surface stoichiometry even at 1150{degree}C. GaN root mean square (rms) surface roughness showed an overall improvement with annealing, but the surface became pitted at 1000{degree}C, at which point the sheet resistance also dropped by several orders of magnitude, and AES confirmed a loss of N from the surface. The InN surface had roughened considerably even at 650{degree}C, and scanning electron microscopy showed significant degradation. In contrast to the binary nitrides, the sheet resistance of InAlN was found to increase by {approximately}10{sup 2} from the as grown value (3.2{times}10{sup {minus}3} {Omega}cm) after annealing at 800{degree}C and then remain constant up to 1000{degree}C, while that of InGaN increased by two orders of magnitude between 700 and 900{degree}C. The rms roughness increased above 800 and 700{degree}C, respectively, for InAlN and InGaN samples. In droplets began to form on the surface at 900{degree}C for InAlN and at 800{degree}C for InGaN, and then evaporate at 1000{degree}C, leaving pits. AES analysis showed a decrease in the N concentration in the top 500 A of the sample for annealing {ge}800{degree}C in both materials. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 402517
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANNEALING
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
INDIUM NITRIDES
ROUGHNESS
STOICHIOMETRY
SURFACE PROPERTIES
SURFACE STRUCTURE
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K