Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition
Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal--insulator--silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230710
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 79; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics
Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane
Atmospheric pressure chemical vapor deposition of doped zinc oxide thin films and their electrical and optical properties
Journal Article
·
Sat Oct 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:20714133
Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane
Journal Article
·
Tue Mar 14 23:00:00 EST 2006
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:20777046
Atmospheric pressure chemical vapor deposition of doped zinc oxide thin films and their electrical and optical properties
Thesis/Dissertation
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6960505