Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots
The effect of growth temperature on the optical properties of self-assembled In{sub 0.65}Al{sub 0.35}As/Al{sub 0.35}Ga{sub 0.65}As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560{sup o}C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560{sup o}C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530{sup o}C and that of the short-wavelength quantum-dot laser previously reported. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230579
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.1388021; Othernumber: JAPIAU000090000004002048000001; 003117JAP; PBD: 15 Aug 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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