Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)

Journal Article · Mon Oct 23 00:00:00 EDT 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.85.3672· OSTI ID:40205881

Vailionis, A; Cho, B; Glass, G; Desjardins, P; Cahill, David G; Greene, J E

The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers grown on Si(001) is investigated using scanning tunneling microscopy. The initial step takes place via the formation of 2D islands which evolve into small ({approx_equal}180 {angstrom}) 3D islands with a height to base diameter ratio of {approx_equal} 0.04, much smaller than the 0.1 aspect ratio of {l_brace}105{r_brace}-faceted pyramids which had previously been assumed to be the initial 3D islands. The ''prepyramid'' Ge islands have rounded bases with steps oriented along <110> and exist only over a narrow range of Ge coverages, 3.5--3.9monolayers.

• Sponsoring Organization: (US)
• OSTI ID: 40205881
• Journal Information: Physical Review Letters, Vol. 85, Issue 17; Other Information: DOI: 10.1103/PhysRevLett.85.3672; Othernumber: PRLTAO000085000017003672000001; 027042PRL; PBD: 23 Oct 2000; ISSN 0031-9007
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ISLANDS
SCANNING TUNNELING MICROSCOPY
GERMANIUM