{sup 4}He liquid-vapor interface below 1 K studied using x-ray reflectivity
The free surface of thin films of liquid helium adsorbed on a solid substrate has been studied using x-ray reflectivity. The film thickness and interfacial profile are extracted from the angular dependence of measured interference between signals reflected from the liquid-vapor and liquid-substrate interfaces. Polished silicon wafers, chemically cleaned and passivated, were used as substrates. Results are reported for measurements for {sup 4}He films 35 to 130 Aa thick in the temperature range 0.44 to 1.3 K. The 10%/90% interfacial width for temperature T=0.45 K varies from 5.3{+-}0.5 Aa for 36{+-}1.5 Aa thick films to 6.5{+-}0.5 Aa for 125{+-}1.5 Aa thick films. The profile width at zero temperature should not differ significantly from that measured at T=0.45 K. For T=1.22 K, the width is 7.8{+-}1.0 Aa.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205612
- Journal Information:
- Physical Review B, Vol. 62, Issue 14; Other Information: DOI: 10.1103/PhysRevB.62.9621; Othernumber: PRBMDO000062000014009621000001; 100037PRB; PBD: 1 Oct 2000; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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