Local structure of In{sub x}Ga{sub 1-x}As semiconductor alloys by high-energy synchrotron x-ray diffraction
Nearest- and higher-neighbor distances as well as bond length distributions (static and thermal) of the In{sub x}Ga{sub 1-x}As (0{<=}x{le}1) semiconductor alloys have been obtained from high-real-space resolution atomic pair distribution functions. Using this structural information, we modeled the local atomic displacements in In{sub x}Ga{sub 1-x}As alloys. From a supercell model based on the Kirkwood potential, we obtained three-dimensional As and (In,Ga) ensemble average probability distributions. These clearly show that As atom displacements are highly directional and can be represented as a combination of <100> and <111> displacements. Examination of the Kirkwood model indicates that the standard deviation ({sigma}) of the static disorder on the (In,Ga) sublattice is around 60% of the value on the As sublattice and the (In,Ga) atomic displacements are much more isotropic than those on the As sublattice. The single-crystal diffuse scattering calculated from the Kirkwood model shows that atomic displacements are most strongly correlated along <110> directions.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205596
- Journal Information:
- Physical Review B, Vol. 63, Issue 20; Other Information: DOI: 10.1103/PhysRevB.63.205202; Othernumber: PRBMDO000063000020205202000001; 010120PRB; PBD: 15 May 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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