Epitaxial growth of dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin film on MgO for room temperature microwave phase shifters
Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of <100>BSTO//<100>MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250{sup o} at 23.675 GHz under an electrical field of 40 V/{mu}m and a figure of merit of {approx}53{sup o}/dB. The performance of the microwave phase shifter based on the epitaxial Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on (001) MgO is close to that needed for practical applications in wireless communications.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205271
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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