Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer

Journal Article · Mon Mar 12 04:00:00 EST 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1352692· OSTI ID:40205251

Dubon, O D; Evans, P G; Chervinsky, J F; Aziz, M J; Spaepen, F; Golovchenko, J A; Chisholm, M F; Muller, D A

In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350{sup o}C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate--film interface. The resulting concentration of electrically active As, 1.8x10{sup 21} cm{sup -3}, represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method.

• Sponsoring Organization: (US)
• OSTI ID: 40205251
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 78; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPOSITION
EPITAXY
PHYSICS
SEGREGATION
SUBSTRATES