Effects of Dissipation on a Superconducting Single Electron Transistor
Journal Article
·
· Physical Review Letters
We measure the effect of dissipation on the minimum zero-bias conductance, G{sup min}{sub 0} , of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G{sup min}{sub 0} increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm etal.in which the leads coupled to the sSET are represented by lossy transmission lines.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204717
- Journal Information:
- Physical Review Letters, Vol. 87, Issue 1; Other Information: DOI: 10.1103/PhysRevLett.87.017002; Othernumber: PRLTAO000087000001017002000001; 020127PRL; PBD: 2 Jul 2001; ISSN 0031-9007
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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