Comment on {open_quotes}Reduction of interface-state density in 4H{endash}SiC n-type metal{endash}oxide{endash}semiconductor structures using high-temperature hydrogen annealing{close_quote}{close_quotes} [Appl. Phys. Lett. 78, 4043 (2001)]
No abstract prepared.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204550
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 25; Other Information: DOI: 10.1063/1.1379978; Othernumber: APPLAB000078000025004043000001; 012125APL; PBD: 18 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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