Imaging of trapped charge in SiO{sub 2} and at the SiO{sub 2}{endash}Si interface
Charged defects in SiO{sub 2} and at the SiO{sub 2}{endash}Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial P{sub b} centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204535
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 25; Other Information: DOI: 10.1063/1.1380396; Othernumber: APPLAB000078000025003998000001; 041125APL; PBD: 18 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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