Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal display
Journal Article
·
· Journal of Applied Physics
Self-passivated copper as a gate electrode in the form of TiO/Cu/TiO/TiN/SiO{sub 2} has been obtained by annealing Cu/Ti/TiN/SiO{sub 2}. The thickness of Ti in Cu/TiTiN was optimized at 150 Aa by forming an 80 Aa continuous TiO film on the outer surface of the Cu. The multilayer of SiO{sub 2}/TiO/Cu/TiO/TiN/SiO{sub 2} showed stable electrical passivating properties against Cu diffusion into the top or bottom SiO{sub 2}. Consequently, self-passivated copper has secured the dielectric properties of plasma enhanced chemical vapor deposition SiO{sub 2} and can be utilized as a gate electrode in low temperature poly-Si thin film transistor liquid crystal displays without sacrificing the low resistivity of Cu. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204385
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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