Characterization of SrRuO{sub 3} thin film grown by laser ablation at temperatures above 400{degree}C
Structural and electrical properties of SrRuO{sub 3} thin films grown at various temperatures (T{sub d}) were investigated. The films grew epitaxially when T{sub d}{ge}350{degree}C. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when T{sub d} was above 400{degree}C, whereas crystallinity and conductivity were markedly degraded with decreasing T{sub d} when T{sub d}{le}400{degree}C. Owing to this unique dependence, SrRuO{sub 3} thin film deposited at T{sub d} as low as 400{degree}C showed an acceptable quality for application to electronic devices. For the SrRuO{sub 3}/SrTiO{sub 3}/SrRuO{sub 3} trilayered capacitor structure, when the top SrRuO{sub 3} layer was grown at 400{degree}C, a symmetric permittivity{endash}voltage curve was observed and the SrRuO{sub 3} permittivity value of 340 {epsilon}{sub 0} was obtained. When the top SrRuO{sub 3} layer was grown at 600{degree}C, the permittivity value of SrTiO{sub 3} decreased and even a slight asymmetry of the permittivity{endash}voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO{sub 3} thin film causes less interface degradation. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204345
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.1319323; Othernumber: JAPIAU000090000001000162000001; 014023JAP; PBD: 1 Jul 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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