Lattice location of hydrogen in Mg doped GaN
Journal Article
·
· Journal of Applied Physics
We have used ion channeling to examine the lattice configuration of hydrogen in Mg doped wurtzite GaN grown by metal organic chemical vapor deposition. Hydrogen is introduced by exposure to hydrogen gas or electron cyclotron resonance plasmas and by ion implantation. A density functional approach including lattice relaxation was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results of channeling measurements are compared with channeling simulations for hydrogen at lattice locations predicted by the density functional theory. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204338
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lattice location of deuterium in plasma and gas charged Mg doped GaN
Lattice location of deuterium in plasma and gas charged Mg doped GaN
Fe ion implantation in GaN: Damage, annealing, and lattice site location
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:20104591
Lattice location of deuterium in plasma and gas charged Mg doped GaN
Conference
·
Wed Dec 01 23:00:00 EST 1999
·
OSTI ID:750177
Fe ion implantation in GaN: Damage, annealing, and lattice site location
Journal Article
·
Sun Jul 01 00:00:00 EDT 2001
· Journal of Applied Physics
·
OSTI ID:40204334