Charge transport through a single tetracene grain boundary
The hole transport through a single grain boundary is investigated in the temperature range from 4 to 300 K using a tetracene bicrystal. The carrier concentration is varied by the field effect. The results can be explained using the grain-boundary-trapping model. A potential barrier is formed at the grain boundary due to charged traps at the grain boundary. The barrier height depends significantly on the carrier density within the grain. At low temperatures, tunneling through the grain boundary dominates over thermionic emission over the barrier. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204294
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 24; Other Information: DOI: 10.1063/1.1379986; Othernumber: APPLAB000078000024003821000001; 020125APL; PBD: 11 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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