Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions
Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were {similar_to}1.0{times}10{sup 12}/cm{sup 2} and 2{endash}5{times}10{sup 5}cm{sup 2}/Vs at 1.5 K, respectively. A maximum spin-orbit coupling constant {alpha}{sub zero} of {similar_to}30({times}10{sup {minus}12}eVm) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the {alpha}{sub zero} value with decreasing gate voltage (V{sub g}) was first confirmed in a normal heterojunction. The main origin for such a large {alpha}{sub zero}, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204219
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1362356; Othernumber: JAPIAU000089000012008017000001; 013110JAP; PBD: 15 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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