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Title: Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions

Abstract

Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were {similar_to}1.0{times}10{sup 12}/cm{sup 2} and 2{endash}5{times}10{sup 5}cm{sup 2}/Vs at 1.5 K, respectively. A maximum spin-orbit coupling constant {alpha}{sub zero} of {similar_to}30({times}10{sup {minus}12}eVm) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the {alpha}{sub zero} value with decreasing gate voltage (V{sub g}) was first confirmed in a normal heterojunction. The main origin for such a large {alpha}{sub zero}, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term. {copyright} 2001 American Institute of Physics.

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204219
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 12; Other Information: DOI: 10.1063/1.1362356; Othernumber: JAPIAU000089000012008017000001; 013110JAP; PBD: 15 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COUPLING CONSTANTS; ELECTRONS; GASES; HETEROJUNCTIONS; ORIGIN; PHYSICS; SPIN

Citation Formats

Sato, Y, Kita, T, Gozu, S, and Yamada, S. Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions. United States: N. p., 2001. Web. doi:10.1063/1.1362356.
Sato, Y, Kita, T, Gozu, S, & Yamada, S. Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions. United States. https://doi.org/10.1063/1.1362356
Sato, Y, Kita, T, Gozu, S, and Yamada, S. 2001. "Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions". United States. https://doi.org/10.1063/1.1362356.
@article{osti_40204219,
title = {Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions},
author = {Sato, Y and Kita, T and Gozu, S and Yamada, S},
abstractNote = {Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In{sub 0.75}Ga{sub 0.25}As/In{sub 0.75}Al{sub 0.25}As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were {similar_to}1.0{times}10{sup 12}/cm{sup 2} and 2{endash}5{times}10{sup 5}cm{sup 2}/Vs at 1.5 K, respectively. A maximum spin-orbit coupling constant {alpha}{sub zero} of {similar_to}30({times}10{sup {minus}12}eVm) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the {alpha}{sub zero} value with decreasing gate voltage (V{sub g}) was first confirmed in a normal heterojunction. The main origin for such a large {alpha}{sub zero}, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1362356},
url = {https://www.osti.gov/biblio/40204219}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}