Thickness-dependent dynamic hysteresis scaling behavior in epitaxial Fe/GaAs(001) and Fe/InAs(001) ultrathin films
The dynamic hysteresis scaling behavior in epitaxial Fe/GaAs(001) and Fe/InAs(001) thin films (thickness range 7.3{endash}150 Aa) has been investigated as a function of Fe film thickness in the field sweep rate range 0.005{endash}1000 kOe/s using the magneto-optic Kerr effect. The hysteresis loop area A follows the scaling relation A{proportional_to}(dH/dt){sup {alpha}}. We find two distinct dynamic regimes: the low dynamic regime in the sweep rate range 0.005{endash}250 kOe/s, and the high dynamic regime beyond 250 kOe/s. There is a marked increase in {alpha} between the low and high dynamic regimes which we attribute to the dominant reversal mechanism changing from domain wall motion to nucleation. In the low dynamic regime {alpha} is a decreasing function of Fe film thickness, and this behavior is attributed to the effect of interface-induced pinning. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203945
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1357840; Othernumber: JAPIAU000089000011007018000001; 305111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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