Large domain wall magnetoresistance up to room temperature in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} bridges with nanoconstrictions

Journal Article · Fri Jun 01 00:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1362646· OSTI ID:40203924

Wolfman, J; Haghiri-Gosnet, A M; Raveau, B; Vieu, C; Cambril, E; Cornette, A; Launois, H

To obtain low field magnetoresistance (MR) in manganites, we have introduced a geometrically constrained magnetic domain wall (DW) in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} micrometric devices. Nanoconstrictions artificially induced using high resolution e-beam lithography are shown to effectively reduce the DW width leading to strongly enhanced DW resistance. Sharp and large resistance switches result from the appearance and annihilation of the DWs. Room temperature sharp resistance switches, with a MR of 16%, are evidenced in a manganite-based device. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40203924
• Journal Information: Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1362646; Othernumber: JAPIAU000089000011006955000001; 489111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNIHILATION
MAGNETORESISTANCE
PHYSICS
RESOLUTION
SWITCHES