Central-cell corrections and shallow donor states in strong magnetic fields
Ionization energies and the central-cell corrections have been calculated for a few shallow donors in Si, GaP, and GaAs. We have assumed a short range potential with two parameters for the strength and the range for each donor, representing the central-cell effects. These parameters are fixed using the experimentally available ionization energies for each donor in a semiconductor. In the presence of a magnetic field the donor ionization energies are estimated using a variational procedure. Our results show that the ionization energies and the central-cell corrections increase with magnetic field. Our results are compared for GaAs with the recent work by Heron et al. [R. J. Heron, R. A. Lewis, P. E. Simmonds, R. P. Starret, A. V. Skougarevsky, R. G. Clark, and C. R. Stanley, J. Appl. Phys. 85, 893 (1999)]. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203741
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1359168; Othernumber: JAPIAU000089000011006198000001; 056109JAP; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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