Silicon thin film homoepitaxy by rapid thermal atmospheric-pressure chemical vapor deposition (RT-APCVD)

Book · Sun Dec 01 00:00:00 EST 1996

OSTI ID:400683

Monna, R; Angermeier, D; Slaoui, A; Muller, J C ^[1]

---

1. CNRS, Strasbourg (France). Lab. PHASE

The homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900 C to 1,300 C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. The authors propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction of the gaseous HCl with the silicon surface and the supersaturation of silicon.

• OSTI ID: 400683
• Report Number(s): CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%88
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
SOLAR CELLS
MATERIALS
BORON ADDITIONS
DOPED MATERIALS
CHLORINE COMPOUNDS
SILANES
HYDROGEN
BORON CHLORIDES
TRANSMISSION ELECTRON MICROSCOPY
RUTHERFORD SCATTERING
SCANNING ELECTRON MICROSCOPY
ELECTRIC CONDUCTIVITY
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
EXPERIMENTAL DATA