Estimation of emissivity of a wafer in an RTP chamber by a dynamic observer

Conference · Sun Dec 01 00:00:00 EST 1996

OSTI ID:400679

Belikov, S; Hur, D; Friedland, B; Ravindra, N M ^[1]

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1. New Jersey Inst. of Technology, Newark, NJ (United States)

A method of estimation of wavelength-dependent emissivity of silicon wafers using thermocouple measurements is presented here. A dynamic observer and a persistent excitation of the lamps are required for convergence of the observer`s estimates to the actual values of parameters for emissivity approximation. A TI designed RTP equipment and adaptive close-loop temperature control have been used to generate the required persistent excitation. Theory of emissivity estimation by this method has been developed and illustrated by experiment with this 3-zone RTP system.

• OSTI ID: 400679
• Report Number(s): CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%84
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
HEATING
EMISSIVITY
SILICON
MATHEMATICAL MODELS
ALGORITHMS
THERMAL RADIATION
TEMPERATURE CONTROL
THERMOCOUPLES
HEAT TRANSFER
SIMULATION