DEFECT INTRODUCTION RATES AND DEFECT IDENTIFICATION STUDIES IN LOW-ENERGY ELECTRON IRRADIATED SILICON.
Journal Article
·
· Nucl. Instrum. Methods 92: No. 4, 471-6(1971).
- Research Organization:
- Univ. of Surrey, Guildford, Eng.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-25-045570
- OSTI ID:
- 4001170
- Journal Information:
- Nucl. Instrum. Methods 92: No. 4, 471-6(1971)., Other Information: From Symposium on the use of low energy accelerators; London, England (27 May 1970). See CONF-700563. Orig. Receipt Date: 31-DEC-71
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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MEASUREMENTS OF THE DISTRIBUTION OF DEFECT INTRODUCTION RATE WITH DEPTH IN SILICON IRRADIATED WITH 300-kev ELECTRONS
TEMPERATURE AND ENERGY DEPENDENCE OF THE INTRODUCTION AND ANNEALING RATES OF ELECTRON-INDUCED DEFECTS IN n- AND p-TYPE SILICON
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Mon Jan 01 00:00:00 EST 1968
· J. Appl. Phys., 39: 2890(May 1968).
·
OSTI ID:4001170
MEASUREMENTS OF THE DISTRIBUTION OF DEFECT INTRODUCTION RATE WITH DEPTH IN SILICON IRRADIATED WITH 300-kev ELECTRONS
Journal Article
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Wed Jun 01 00:00:00 EDT 1966
· Journal of Applied Physics (U.S.)
·
OSTI ID:4001170
TEMPERATURE AND ENERGY DEPENDENCE OF THE INTRODUCTION AND ANNEALING RATES OF ELECTRON-INDUCED DEFECTS IN n- AND p-TYPE SILICON
Thesis/Dissertation
·
Wed Jan 01 00:00:00 EST 1964
·
OSTI ID:4001170
Related Subjects
N33110* -Physics (Solid State)-Radiation Effects
CARRIER MOBILITY
DEFECTS
ELECTRON BEAMS
KEV RANGE 100-1000
N-TYPE CONDUCTORS
SILICON
TEMPERATURE
TRAPS
ELECTRONS/effects on n-type silicon at 200 to 400 keV
defect introduction rates from
(E)
SILICON/radiation effects on n-type, carrier trapping levels, free carrier concentrations, and defect introduction rates from 200- to 400-keV electron
CARRIER MOBILITY
DEFECTS
ELECTRON BEAMS
KEV RANGE 100-1000
N-TYPE CONDUCTORS
SILICON
TEMPERATURE
TRAPS
ELECTRONS/effects on n-type silicon at 200 to 400 keV
defect introduction rates from
(E)
SILICON/radiation effects on n-type, carrier trapping levels, free carrier concentrations, and defect introduction rates from 200- to 400-keV electron