Raw materials influence the alpha-particle emission rate of AlN

Journal Article · Tue Oct 01 04:00:00 EDT 1996 · American Ceramic Society Bulletin

OSTI ID:398164

Fawcett, T G; Knudsen, A K; Guiton, T A; Quinn, III, T J; Mills, L K; Dunmead, S D; Rigot, W L; Wijeyesekera, S D ^[1]

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1. Dow Chemical Co., Midland, MI (United States)

Most electronic devices are packaged in plastic, generally epoxy-based molding compounds. Organic compounds serve as effective barriers for alpha particles. However, sensitive or thermally stressed devices often must be packaged in ceramic packages, including Al{sub 2}O{sub 3}, glass ceramics, BeO and AlN. Therefore, the concentration of alpha-particle-generating elements and the tendency of the material to induce soft errors in the device must be considered when selecting a ceramic package option. AlN is a relatively new packaging material. It offers high thermal conductivity ({ge}170 W/(m{center_dot}K)), dielectric and mechanical properties comparable to Al{sub 2}O{sub 3} and a coefficient of thermal expansion similar to silicon. AlN substrates and packages are produced via pressureless sintering or hot pressing, using high-purity powders and sintering aids, generally alkaline- and/or rare-earth oxides. The concentration of alpha-particle-emitting elements in AlN ceramics depends on the concentration of these elements in the AlN and additive powders. In the present work, the concentration of alpha-particle-generating elements uranium and thorium in AlN powders is shown to be related to the levels of these elements in the raw materials used in AlN powder synthesis.

• OSTI ID: 398164
• Journal Information: American Ceramic Society Bulletin, Journal Name: American Ceramic Society Bulletin Journal Issue: 10 Vol. 75; ISSN 0002-7812; ISSN ACSBA7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SORPTION
THORIUM ISOTOPES
URANIUM ISOTOPES