Dephasing of Bloch oscillations in epitaxial superlattices

Journal Article · Thu Oct 31 23:00:00 EST 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.R14301· OSTI ID:397584

Reynolds, J P; Luban, M ^[1]

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1. Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)

We show that the essential features of the decay of Bloch oscillations observed in epitaxially grown semiconductor superlattices subject to a dc electric field can be reproduced using a one-dimensional model of interface roughness (IR). As a result of IR, the electron dynamics can be characterized in terms of many discrete, incommensurate frequencies near the Bloch frequency. The interference effects associated with these frequencies cause a substantial decrease in amplitude of the signal after several Bloch periods. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Ames National Laboratory
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 397584
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 54; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BLOCH THEORY
CHARGE CARRIERS
COMPUTERIZED SIMULATION
ELECTRO-OPTICAL EFFECTS
EPITAXY
INTERFACES
ROUGHNESS
SEMICONDUCTOR MATERIALS
SUPERLATTICES