Electron dynamics in intentionally disordered semiconductor superlattices
- Departamento de Matematicas, Escuela Politecnica Superior, Universidad Carlos III, E-28911 Leganes, Madrid (Spain)
- Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, E-28040 Madrid (Spain)
- Theoretical Division and CNLS, B213, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Dom{acute i}nguez-Adame {ital et} {ital al}.[Phys. Rev. B {bold 51}, 14359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 397578
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 54, Issue 20; Other Information: PBD: Nov 1996
- Country of Publication:
- United States
- Language:
- English
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