Bulk solidification and recalescence phenomena in amorphous Ge films upon picosecond pulsed laser irradiation

Journal Article · Sun Dec 01 04:00:00 EST 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363815· OSTI ID:397417

Siegel, J; Solis, J; Afonso, C N ^[1]; Garcia, C ^[2]

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1. Instituto de Optica del CSIC, C/Serrano 121, 28006 Madrid (Spain)
2. Departamento de Fisica de la Materia Condensada, Cristalografia y Mineralogia, Facultad de Ciencias, 47011 Valladolid (Spain)

Melting and rapid solidification are induced in amorphous Ge films upon irradiation with 10 ps laser pulses at 583 nm. The role of heat flow during the solidification process was investigated by comparing the behavior of films grown on substrates with different thermal properties. The melting and solidification kinetics are followed in real time by reflectivity measurements in the nanosecond time scale and the induced structural changes are analyzed by means of Raman spectroscopy in micro-Raman configuration. If the thermal diffusivity of the substrate is high enough, the film reamorphizes via bulk nucleation of the amorphous phase from the melt. When the thermal diffusivity of the substrate is reduced, the initial nucleation of the solid phase leads to an increase in the liquid temperature (recalescence) and in the melt duration, thus promoting the formation of the crystalline phase. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 397417
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CRYSTALLIZATION
DIFFUSION
DIFFUSIVITY
GERMANIUM
LASER-RADIATION HEATING
PHASE TRANSFORMATIONS
RAMAN SPECTRA
REFLECTIVITY
SOLIDIFICATION
THIN FILMS