Exciton lifetimes in GaN

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:395024

Bergman, J P; Harris, C; Monemar, B ^[1]; Amano, H; Akasaki, I ^[2]

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1. Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology
2. Meijo Univ., Nagoya (Japan). Dept. of Electrical and Electronic Engineering

The authors have performed time resolved photoluminescence measurements of the exciton recombination in different GaN samples at low temperatures. In epitaxial layers the decay time of the free exciton is typically faster than 100 ps. This is due to a dominating non-radiative recombination process. In thick bulk samples the authors have resolved and measured the decay time of the free exciton with a value of about 200 ps. They believe that this value is close to the radiative lifetime for free excitons in GaN. They have also shown that excitation transfer occurs between free and bound exciton states. They have furthermore measured the decay of the donor and acceptor bound excitons, and obtained values of the decay time of 250 ps and 1,200 ps, respectively.

• OSTI ID: 395024
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
BINDING ENERGY
CRYSTAL DEFECTS
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
PHOTOLUMINESCENCE
RADIATIVE DECAY
RECOMBINATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
VAPOR PHASE EPITAXY