Photoluminescence related to the 2-dimensional electron gas in modulation doped GaN/AlGaN structures
Book
·
OSTI ID:395011
- Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology
- Meijo Univ., Nagoya (Japan)
The authors report low temperature photoluminescence (PL) spectra related to a two-dimensional electron gas confined at a GaN/AlGaN heterointerface. The recombination between electrons confined in the bottom of the interface potential and photoexcited holes causes a broad PL emission about 50 meV below the bulk GaN exciton emission. A second emission, attributed to the recombination of electrons in the first excited level at the interface, is also observed close to the excitonic band gap in GaN. The data agrees with a self consistent calculation of the energy levels and the electron concentration at the interface. Similar PL data from a modulation doped AlGaN/GaN quantum well exhibit three PL emissions related to the 2D electron gas.
- OSTI ID:
- 395011
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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