Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN
Book
·
OSTI ID:395006
- Arizona State Univ., Tempe, AZ (United States)
- Univ. of Illinois, Urbana, IL (United States). Coordinated Science Lab.
Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy {bar h}{omega} = 4.36 eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. The authors have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. The work demonstrates that the Froehlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.
- OSTI ID:
- 395006
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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