GaAsN alloys and GaN/GaAs double-hetero structures

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394965

Sato, Michio ^[1]

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1. NTT Basic Research Labs., Atsugi, Kanagawa (Japan)

Ternary alloys; GaAsN (N < 3%) were grown by plasma-assisted metalorganic chemical vapor deposition using triethylgallium, AsH{sub 3}, and plasma-cracked NH{sub 3} or N{sub 2} as the precursors. More N atoms were incorporated into the alloys from N{sub 2} than NH{sub 3} at constant N/As ratios. Both photoluminescence peaks and optical absorption edges were redshifted from GaAs bandgap with increasing the N content, indicating the GaAsN alloys have narrower bandgaps than GaAs. GaN/GaAs double-hetero structures were grown by exposing GaAs surfaces to N-radical flux to replace surface As atoms by N atoms, and by growing GaAs on the thin GaN layers. When the GaN thickness exceeded one-monolayer, the GaN/GaAs interfaces and the GaAs cap layers deteriorated drastically. The one-monolayer-thick GaN embedded in GaAs attracts electrons and shows intense photoluminescence, whereas the GaN cluster is non-radiative, probably because of the defects caused by the large lattice-mismatch between GaN and GaAs.

• OSTI ID: 394965
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ABSORPTIVITY
AMMONIA
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
DISLOCATIONS
ELECTRONIC EQUIPMENT
ETCHING
EXPERIMENTAL DATA
GALLIUM NITRIDES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MICROSTRUCTURE
NITROGEN
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PLASMA
POTASSIUM HYDROXIDES
RADICALS
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION