The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
Book
·
OSTI ID:394957
- Univ. of Gent-IMEC (Belgium). Dept. of Information Technology
- Thomas Swan and Co., Ltd., Cambridge (United Kingdom)
- Univ. of Strathclyde, Glasgow (United Kingdom)
In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor.Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterization includes surface morphology studies, DC x-ray diffraction and optical characterization. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 {micro}m thickness.
- OSTI ID:
- 394957
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
GALLIUM NITRIDES
HYDROGEN
LIGHT EMITTING DIODES
MATERIALS
MORPHOLOGY
NITROGEN
NUCLEATION
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
X-RAY DIFFRACTION
42 ENGINEERING
AMMONIA
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
GALLIUM NITRIDES
HYDROGEN
LIGHT EMITTING DIODES
MATERIALS
MORPHOLOGY
NITROGEN
NUCLEATION
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
X-RAY DIFFRACTION