Diffusion and dissociation of two-dimensional islands on FCC metal (100) surfaces

Conference · Sun Sep 01 04:00:00 EDT 1996

OSTI ID:392814

Zhang, Z Y; Shi, Z P ^[1]; Haug, K ^[2]

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1. Oak Ridge National Lab., TN (United States). Solid State Div.
2. Lehigh Univ., Bethlehem, PA (United States). Dept. of Chemistry

The mobility and the stability of small two-dimensional islands on a substrate are basic issues of surface science and thin-film growth. In this article, the authors present the main results from a series of theoretical studies of island diffusion and dissociation on several fcc metal (100) surfaces, with and without the effects of hydrogen as surface impurities. They found that a collective atomic process, shearing of a dimer belonging to a compact island, in many cases provides the most effective pathway for island diffusion. Consideration of this novel atomic process leads to the possibility of observing a new set of critical island sizes in dynamical island growth or coarsening. When H is introduced into the Ni system, the mobility of adatoms and islands of all sizes are enhanced. This conclusion suggests that H will function as an anti-surfactant in Ni(100) homoepitaxy.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Oak Ridge Inst. for Science and Education, TN (United States); Lehigh Univ., Bethlehem, PA (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 392814
• Report Number(s): CONF-9608126--2; ON: DE97000473
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC CLUSTERS
CRYSTAL GROWTH
DIFFUSION
DIMERS
EPITAXY
FCC LATTICES
NICKEL
SUBSTRATES
SURFACTANTS
THIN FILMS