Method for shallow junction formation

Patent · Tue Oct 29 04:00:00 EST 1996

OSTI ID:392651

Weiner, K H

A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

• Research Organization: University of California
• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5,569,624/A/
• Application Number: PAN: 8-464,021
• OSTI ID: 392651
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CRYSTAL DOPING
DIELECTRIC MATERIALS
FABRICATION
INTEGRATED CIRCUITS
LASER RADIATION
SEMICONDUCTOR JUNCTIONS