Filling dependence of magnetoresistance in perovskite-type manganese oxide films
Book
·
OSTI ID:392207
- Joint Research Center for Atom Technology, Tsukuba (Japan)
Filling dependence of magnetotransport properties was investigated in Nd{sub 1{minus}x}Sr{sub x}MnO{sub 3} films. Hysteretic behavior was observed in temperature dependencies of resistivity for restricted filling of x = 0.35 and 0.50, indicating the occurrence of a first-order phase transition at low temperatures. The transition gives rise to a high-resistivity state which collapses to low-resistivity state under an external magnetic field. Change in resistivity by applying magnetic field was more than a order of magnitude. Origin of colossal magnetoresistance (CMR) is briefly discussed in terms of such a first-order phase change induced by a magnetic field.
- OSTI ID:
- 392207
- Report Number(s):
- CONF-951155--; ISBN 1-55899-304-5
- Country of Publication:
- United States
- Language:
- English
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