Atomic scale control of epitaxial growth and interface in oxide thin films for advanced oxide lattice engineering

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:392149

Yoshimoto, M; Maeda, T; Ohnishi, T; Lee, G H; Koinuma, H ^[1]

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1. Tokyo Inst. of Tech., Yokohama (Japan)

Advanced thin film technology based on laser MBE has enabled control of the molecular layer-by-layer epitaxial growth and interface structure of oxide thin films in an atomic scale. Molecular layer epitaxy of oxide thin film growth was verified from in situ monitoring of intensity oscillation in reflection high energy electron diffraction (RHEED). Advanced oxide thin film technology was applied to form oxide superlattices for quantum functional oxides and to achieve lattice-matched heteroepitaxy in oxide films on silicon substrate for all epitaxial oxide/silicon hybrid devices. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of growth process using RHEED but also atomic regulation of the substrate surface by atomic force microscopy and ion scattering spectroscopy.

• OSTI ID: 392149
• Report Number(s): CONF-951155--; ISBN 1-55899-304-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM OXIDES
BARIUM OXIDES
CERIUM OXIDES
COPPER OXIDES
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
INTERFACES
LASERS
MATERIALS
MOLECULAR BEAM EPITAXY
SILICON
STRONTIUM OXIDES
STRONTIUM TITANATES
TITANIUM OXIDES
TRANSMISSION ELECTRON MICROSCOPY
VANADIUM OXIDES
X-RAY DIFFRACTION